This model mainly describes the I-V characteristic and memristive behavior of the ferroelectric tunnel junction. The I-V characteristic is modeled by Gruverman model and Fowler-Nordheim tunneling, respectively, at the low and high voltage. By setting the domain percentage to be a state variable, the memristive behavior is described by Merz’s law, KAI model and creep process model. This model can be used to simulate the FTJ-based non-volatile memory/logic circuits and neuromorphic systems.
1. Spintronics Interdisciplinary Center, Beihang University, Beijing 100191, China
2. Institut d'Electronique Fondamentale, CNRS UMR 8622, University of Paris-Sud 11, 91405 Orsay, France
1. Z. Wang, W. Zhao, W. Kang, Y. Zhang, J. O. Klein, D. Ravelosona, and C. Chappert, "Compact modelling of ferroelectric tunnel memristor and its use for neuromorphic simulation," Appl. Phys. Lett., vol. 104, no. 5, pp. 053505, 2014. DOI: 10.1063/1.4864270
2. Z. Wang, W. Zhao, W. Kang, A. Bouchenak-Khelladi, Y. Zhang, Y. Zhang, J. O. Klein, D. Ravelosona, and C. Chappert, "A physics-based compact model of ferroelectric tunnel junction for memory and logic design," J. Phys. D: Appl. Phys., vol. 47, no. 4, pp. 045001, 2014. DOI: 10.1088/0022-3727/47/4/045001
3. Zhaohao Wang. Compact modeling and circuit design based on ferroelectric tunnel junction and spin-Hall-assisted spin-transfer torque. Thesis, Universite Paris-Saclay, 2015.
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