Recently, a novel three-terminal MTJ cell is proposed to pave the path toward universal memory, which combines voltage-controlled magnetic anisotropy (VCMA) effect and negative capacitance (NC) effect for the first time. Draw support from the amplified VCMA effect and the 3-step operation scenario, this MTJ cell can dramatically lower the energy consumption as well as ensure high reliability. Besides, all spin logic devices based on the basic MTJ cell also can benefit from this design. In this file, we present the compact model which describes the dynamic , stochastic behaviors and transport process of the spin-based devices with negative capacitanceamplified voltage-controlled magnetic anisotropy effect (NV-SD). The capability of this model, which will be employed to perform evaluations for NV-SD based circuit and systems,even other spin-based devices, is shown by SPICE simulations.
1. Fert Beijing Institute, BDBC and School of Microelectronics, Beihang University, Beijing 100191, China
2. School of Electronic and Information Engineering, Beihang University, Beijing 100191, China
3. Department of Electrical Engineering, University of California at Los Angeles, Los Angeles, CA 90095 USA
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1. Gao T, Zeng L, et al. Compact Model for Negative Capacitance Enhanced Spintronics Devices [J]. IEEE Transactions on Electron Devices, 2019.4. DOI: 10.1109/TED.2019.2908957
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