Spinmodel Library

Know more about spin!


Recently, a novel three-terminal MTJ cell is proposed to pave the path toward universal memory, which combines voltage-controlled magnetic anisotropy (VCMA) effect and negative capacitance (NC) effect for the first time. Draw support from the amplified VCMA effect and the 3-step operation scenario, this MTJ cell can dramatically lower the energy consumption as well as ensure high reliability. Besides, all spin logic devices based on the basic MTJ cell also can benefit from this design. In this file, we present the compact model which describes the dynamic , stochastic behaviors and transport process of the spin-based devices with negative capacitanceamplified voltage-controlled magnetic anisotropy effect (NV-SD). The capability of this model, which will be employed to perform evaluations for NV-SD based circuit and systems,even other spin-based devices, is shown by SPICE simulations.

By Tianqi Gao1, Lang Zeng1, Deming Zhang1, Youguang Zhang2, Kang L. Wang3 and Weisheng Zhao1

1. Fert Beijing Institute, BDBC and School of Microelectronics, Beihang University, Beijing 100191, China
2. School of Electronic and Information Engineering, Beihang University, Beijing 100191, China
3. Department of Electrical Engineering, University of California at Los Angeles, Los Angeles, CA 90095 USA

Download model file (Click to see download counts)
Download manual file (Click to see download counts)
NOTICE: if you cannot download with Chrome, please allow the pop-up window to be shown for this site, or open the download link in a new tab. If neither of the option work, please try to use internet explorer to download.


1. Gao T, Zeng L, et al. Compact Model for Negative Capacitance Enhanced Spintronics Devices [J]. IEEE Transactions on Electron Devices, 2019.4. DOI: 10.1109/TED.2019.2908957

Have any other questions? Send an e-mail to us!