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Magnetic tunnel junctions (MTJ) with low switching current, high thermal stability, and small device size, are strongly preferred for low-power, high-reliability, high-density spintronic memory and logic applications. The research of MTJs from shape in-plane magnetic anisotropy (s-IMA) to interfacial perpendicular magnetic anisotropy (i-PMA) has successfully paved the way down to 20-nm scale, below which, however, the i-PMA approach reaches a physical limit in sustaining sufficient thermal stability while achieving low-power spin transfer torque (STT) switching. Recently, studies have reported a new approach to pave the way toward sub-10 nm MTJs satisfying the requirements by revisiting shape perpendicular magnetic anisotropy (s-PMA). In this file, we present a compact model of the sub-10 nm s-PMA MTJ device, which captures both the static and dynamic physical behaviors. This model is SPICE-compatible for hybrid MTJ/CMOS circuit designs. This work is expected to push forward the development of sub-10 nm scale MTJ based spintronic memory and logic circuits.

By Haotian Wang1, Wang Kang1, Youguang Zhang1, and Weisheng Zhao1

1. Fert Beijing Institute, BDBC and School of Microelectronics, Beihang University, Beijing 100191, China

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1. H. Wang, W. Kang, Y. Zhang and W. Zhao, "Modeling and Evaluation of Sub-10-nm Shape Perpendicular Magnetic Anisotropy Magnetic Tunnel Junctions," IEEE Transactions on Electron Devices. DOI: 10.1109/TED.2018.2877938

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